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High purity Carbon Tetrafluoride
High purity Carbon Tetrafluoride

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English denomination: Carbon Tetrafluoride or
Tetrafluoromethane
Molecular formula: CF4.
Opposite molecular weight: 88.00

Tetrafluoromethane (CF4)

 

1. Tetrafluoromethane (carbon tetrafluoride) characteristic

 Under the normal temperature, the tetrafluoro-methane is the condensibility gas which the achromatic color, the odourlessness, do not burn, the volatility is high, is one of stablest organic compounds, when 900°C, with the copper, the nickel, the tungsten, the molybdenum did not respond, only under carbon arc temperature slow decomposition, in the water, under 25°C and 0.1Mpa its solubility is slightly soluble 0.0015% (load ratio), when with ignitable gaseous combustion, will decompose produces the virulent fluoride. 

2. value of Tetrafluoromethane characteristic

 

CAS

75-73-022033

EINECS

200-896-5

UN NO.

UN1956

English name

tetrafluoromethane

Aliss name

R14,carbon tetrafluoride

Molecular formula

CF4

properties

Colorless,Odorless gas

Molecular weight

88.01

Steam pressure

13.33kPa(15.07°C)

melting point 

-183.6°C 

dissolubility

insoluble in water

boiling point

-128.0°C

density

relative density (water =1)1.61(-130°C)

Stability

steady

Dangerous lable

5(non-flammable gas)

Main use

Used to low temperature the ion do a law etching to etc. of the cold agent and integrated circuit technique

 

3. Quality standard of Tetrafluoromethane

 

ITEM

COMPANY STANDARD

Purity CF4%

≥99.9

≥99.99

volume fraction of nitrogen gas(N2)/10-6

≤350

≤40

volume fraction of oxygen(O2)/10-6

≤350

≤20

mass fraction of moisture(H2O)/10-6

≤5

≤1

volume fraction of carbon monoxide(CO)/10-6

≤20

≤10

volume fraction of carbon dioxide(CO2)/10-6

≤80

≤10

mass fraction of acidity(Account by HF)/10-6

≤0.5

≤0.1

volume fraction of other fluorine carbon compound(F-) /10-6

actual measurement

≤10

The volume fraction of total impurity /10-6

≤1000

≤100

4.main uses of Tetrafluoromethane

As the plasma dry etching technique used in a low temperature system air - cooling agent and integrated circuit, Currently, Tetrafluoromethane is the usage biggest as plasma etching technique gas in the micro-electronics industrial , its tall purely gas and the mixed gas(high-purity Tetrafluoromethane mixed with the high-purity oxygen), can extensively be applied to silicon, silicon dioxide, silicon nitride, phosphorosilicate glass  and the etching technique of tungsten thin - film material. At electron spare part surface cleaning, the manufacture of solar cell, laser technique, gaseous insulation, low temperature system air - cooling, leakage inspection agent, control cosmos rocket carriage, the detergent in the printed circuit also in great quantities used. Tetrafluoromethane the dissolving of oxygen good, therefore be used for by the scientist super - depth to dive experiment to replace common compressed air. Have already achieved success on rat currently, in the depth of 275-366 meters, the small white rat is still safe to escape from danger.

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