Indium is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of

Indium (In)

1, Physical character:

Atomic Weight: 114.818

Density: ρ=7.31 g/cm3 (0-100°C)

Melting Point: mp: 156.61 °C

Boiling Point: bp: 2080 °C

2, Specification:

High Purity Indium:

In-05 Grade 99.999. The content of Indium is above 99.999%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 10 ppm;

Uitra Purity Indium:

In-06 Grade 99.9999. The content of Indium is above 99.9999%. The total content of Cd, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm;

Uitra High Purity Indium:

In-07 Grade 99.99999. The content of Indium is above 99.99999%. The total content of Ag, Cd, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm;

3, Physical Size:

Virgulate, Ingot, Granule.

4, Usage:

It is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of Germanium & Silicon single crystal.

5, Packing:

It is packed with dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampule.