1.SI1012R/X,Si1012R/X
2.N-Channel 1.8 V (G-S) MOSFET

SI1012R/X

1.SI1012R/X,Si1012R/X
2.N-Channel 1.8 V (G-S) MOSFET

FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET: 1.8 V Rated
• Gate-Source ESD Protected: 2000 V
• High-Side Switching
• Low On-Resistance: 0.7
• Low Threshold: 0.8 V (typ.)
• Fast Switching Speed: 10 ns
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers

BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation

Dimensions: