Major capability parameter

Crystal structure

M4

Growth method

Czochralski method

Atoms density

~1.37x1020 atoms/cm3

Unit cell constant

a=b=7.12 Å, c=6.29 Å

Density

4.22(g/cm3)

Hardness

5 (mohs) (similar with glass)

Melt point

1825°C

Thermal conductivity

A=5.32 (w/mk) C=5.10 (w/mk)

Denko coefficient

dna/dT=8.5×10-6/k; dnc/dT=3.0×10-6/k

Thermal expansion

aa=4.43x10-6/K ac=11.37x1010-6/K

Spectral range

0.45-5µm

(λ:μm)

ne2=3.77843+0.069736/(λ2 -0.04724)-0.0108133λ2

ne2=4.55905+0.110534/(λ2 -0.04813)-0.0122676λ2

n \ wavelength

0.63µm

1.30µm

1.55µm

Index of refraction no

1.9929

1.9500

1.9447

Index of refraction ne

2.22154

2.1554

2.1486

(Δn=ne-no)

0.2225

0.2054

0.2039

Crystal bar <001>±0.5º

Φ25mm×25mm

θ=0/45 º 

Φ=0/45 º

2×2×7mm,4×4×7.5mm

AR

R<0.25% (1550nm)

Polishing

Single or double

Pack

100 clean bag, 1000 exactly clean bag