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SiO2 Photoelectric Crystal Material
SiO2 Photoelectric Crystal Material

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1. Crystal structure: M6
2. Hardness: 7 mohs
3. Index of refraction: 1.544
4. Frequency constant: 1661KHz/mm

SiO2 crystal is an excellent kipen for wireless communications industry a filter.

 

Major capability parameter

Growth method

hydro-thermal method

Crystal Structure

M6

Unit cell constant

a=4.914Å    c=5.405 Å

Melt point (°C)

1610°C

Density

2.684g/cm3

Hardness

7 (mohs)

Thermal conductivity

0.0033cal/cm°C

Planned constant

1200uv/°C (300°C)

Index of refraction

1.544

Thermal expansion

α11: 13.71×106 / °C α33: 7.48×106 /°C

Frequency constant

1661 (kHz/mm)

Crystal orientation

Y, X or Z, 30º~42.75 º ±5 

Polishing

Single or double  Ra<10Å

Thickness

0.5mm±0.05mm TTV<5um

Diameter

Φ2″(50.8mm), Φ3″(76.2mm), Φ4″(100mm)±0.2mm 

main positioning: 22±1.5mm (Φ3″) 32±3.0 (Φ4″)

Secondary positioning: 10mm±1.5mm

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