1. Crystal structure: M6
2. Hardness: 7 mohs
3. Index of refraction: 1.544
4. Frequency constant: 1661KHz/mm
SiO2 crystal is an excellent kipen for wireless communications industry a filter.
Major capability parameter | |
Growth method | hydro-thermal method |
Crystal Structure | M6 |
Unit cell constant | a=4.914Å c=5.405 Å |
Melt point (°C) | 1610°C |
Density | 2.684g/cm3 |
Hardness | 7 (mohs) |
Thermal conductivity | 0.0033cal/cm°C |
Planned constant | 1200uv/°C (300°C) |
Index of refraction | 1.544 |
Thermal expansion | α11: 13.71×106 / °C α33: 7.48×106 /°C |
Frequency constant | 1661 (kHz/mm) |
Crystal orientation | Y, X or Z, 30º~42.75 º ±5 |
Polishing | Single or double Ra<10Å |
Thickness | 0.5mm±0.05mm TTV<5um |
Diameter | Φ2″(50.8mm), Φ3″(76.2mm), Φ4″(100mm)±0.2mm main positioning: 22±1.5mm (Φ3″) 32±3.0 (Φ4″) Secondary positioning: 10mm±1.5mm |