BiDi module ,
1)1310nm/1550nm
2)power 2mW
3)responsivity 0.85A/W
BiDi module
1.Fearure:
High stability DFB/FP laser diode ,Built-in optical isolator
Low thershold current .Low operating current
Emission wavelength 1310nm/1550nm
High responsivity .InGaAs PIN DIODE
Low capacitance Low dard current
integrated high-isolation.Low insertion loss WDM
2.Application
Transceiver Module
CDMA.CATV.GSM etc
Telecommounication
Gigabit Ethemet
Laser Diode | Parameter | Symbol | Min | Typ | Max | Unit | Remark |
Rated Output Power Ith+20Ma | Po | 1.5 | 2 | -- | mW | CW | |
Threshold Current | Ith | -- | 10 | -- | mA | CW | |
Operating Current | Iop | -- | 30 | -- | mA | CW | |
Forward Voltage | Vop | -- | 1.2 | 1.5 | V | Po=2mw | |
Peak Wavelength | λc | 1290 | 1310 | 1330 | nm | Po=2mw,Tc=25°C | |
1530 | 1550 | 1570 | |||||
Spectral width | λ | -- | -- | 1 | nm | - 20dB | |
Specteal Shift | λ/T | -- | -- | 0.1 | Nm/°C | Po=2mw,Tc=25°C | |
Side mode suppression ratio | SMSR | 30 | 40 | -- | dB | Po=2mw | |
Tracking error | TE | - 1 | -- | 1 | dB | Im=cost,TE=10log(p/2) | |
Monitor current | Im | 0.1 | -- | 0.8 | mA | Vrpd=5V,Po=2mW | |
Monitor dark current | Id | -- | -- | 0.1 | μA | Vrpd=5V, | |
Relative intensity noise | Rin | -- | - 155 | - 134 | dB/Hz | OpRl<-40dB F=2400MHz | |
Isolation | ISO | 30 | -- | -- | dB |
| |
RF Bandpass flatness | BF | -- | -- | 4 | dB | Peak to valley, 80MHz to 2400MHz In 30MHz bandpass BF<0.5 dB | |
IMD3 | IMD3 | -- | - 65 | - 70 | dBc | 2 tone test, f1=2200MHz, f2=2202.5MHz, OMI=20%/tone, | |
PIN diode | Operating wavelength | λc | 1100 | -- | 1700 | nm |
|
Bandwidth(-3dB) | BW | -- | 2.5 | -- | GHz |
| |
Capacitance | C | -- | -- | 0.5 | pf | Vcc=5V | |
Dark current | Id | -- | 1 | -- | nA | Vcc=5V | |
Responsivity | R | 0.8 | 0.85 | -- | A/W | Vcc=5V | |
Saturation power | Psat | 3 | -- | -- | dbm |
| |
CSO |
|
| - 70 |
|
|
| |
CTB |
|
| -80 |
|
|
| |
Optical returnloss | ORL | 45 |
|
| dB |
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laser diode pinout :
pin diode pinout: