ddr3 1066 1333 1600 memory
1.512Mx64bit(4GB)2R*8
2.Warranty:3years
3.All tested by Memtest86/+
4.2% Defective ratio
ddr3 1066 1333 1600 memory
1.512Mx64bit(4GB)2R*8
2.Warranty:3years
3.All tested by Memtest86/+
4.2% Defective ratio
512M x 64-bit (4GB)DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8 memory module, based on sixteen 256M x8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers.
FEATURES
* JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
* VDDQ = 1.5V (1.425V ~ 1.575V)
* 667MHz fCK for 1333Mb/sec/pin
* 8 independent internal bank
* Programmable CAS Latency: 9, 8, 7, 6
* Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
* Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
* 8-bit pre-fetch
* Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
* Bi-directional Differential Data Strobe
* Internal(self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
* On Die Termination using ODT pin
* Average Refresh Period 7.8us at lower than TCASE 85°C,3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.18" (30mm)/Height 0.740" (18.75mm), single/double sided component
SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 110ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 1.140 W*
UL Rating 94 V - 0
Operating Temperature 0°C to 85°C
Storage Temperature -55°C to +100°C
All tested from chips, all modules tested pass by memtest86/memtest86+ with platform as P35/G41/P45/H55/P55/X58/H61/H67/P67
Warranty: 3 years at least. Defective ratio <=1%
