Items 

Specification

Crystal Growth Technique

Cast

Crystal Structure

Quasi-mono crystalline

Dimension

156×156mm±0.5mm

Thickness

200±20μm

Edge Angle

90°±0.25°

Diagonal

220+/-0.5mm

Bevel edge Angle

45°±10°

Chamfer Length

1.5±0.5mm

TTV

≤40μm

Bow

≤70μm

big grain rate

big grain area≥90%        G++ 

90%> big grain area ≥70%   G+

big grain area <70%        G

Saw marks

≤15μm

Wafer Surface

No stain, splash on surface obvious

Crack

No crack visible with naked eyes

Pin Hole

No pin hole

Conductivity Type

 P-type

Carbon content

≤5.0×1017 at/cm3

Oxygen content

≤1.0×1018 at/cm3

Resistivity

0.5~3.0Ω·cm

Life Time

≥2μs (Brick)

Edge Defects

1. Edge chippings: Depth≤0.5mm,Length≤0.5mm,

Item 2.3total allowed: max 2 places

2.indentation:≤0.5mm, length≤0.5mm, no“V”;Depth≤0.5mm, Length≤0.5mm, no“V” shape

3. Edge chip : Depth≤0.5mm,Length≤1mm,