N Type
Diameter 29-150mm
Thinkness more than 150um
Resistivity 30-600ohm-cm

Neutron-Transmutation –Doped (NTD) Fz Crystal:

Take NTD treatment on the un-doped Fz crystal in order to gain better radial resistivity variation (RRV) within ingot. By the method, it can produce uniformed doping-atom distribution and promote significantly the efficiency of using silicon crystal. The unique character of Radial Resistivity Variation performance increases the qualified rate of products. These products are currently used on semiconductor power devices (SR, SCR, GTR, GRO, SITH, IGBT, PIN, SMART POWER, POWER IC devices etc.) and material for making power integrated circuits, high-energy detector, photo-electronic devices.

NTDFZ Mono-crystalline Silicon Slice Specification