6-inch silicon chip

6-inch 125 × 125 silicon chip
1 Dimensions
1.1 wafer diameter: 150 ± 0.4mm
1.2 silicon width: 125 ± 0.4mm
1.3 Wafer thickness: 200 ± 20μm
1.4 The total thickness variation (TTV): 0.03mm
1.5 verticality: on-chip rectangular diagonal are equal, tolerance ± 0.5mm
1.6 Bending: ≤ 0.035mm
(2) technical parameters
2.1 Resistivity: 0.5-3Ω.cm
2.2 Conductivity Type: P-type
2.3 minority carrier lifetime: ≥ 10μs
2.4 Oxygen content: <1 × 1018atoms / cm3
2.5 Carbon content: <10 × 1016atoms / cm3
2.6 Orientation: (100) ± 1.5 °
2.7 dislocation density: 3 × 103  / cm3