3.0mm Round Type Phototransistor
1) Material: silicone
2) Spectral range of sensitivity:700-1200nm
3) Rohs compliant
3.0mm Round Type Phototransistor
Features:
1. Chip material: Si
2. Lens Appearance: Black
3. Low power consumption.
4. High efficiency.
5. Versatile mounting on P.C. Board or panel.
6. Low current requirement.
7. This product don’t contained restriction
substance, compliance RoHS standard.
Applications:
1. Optical coupler
2. Game machine
3. Sensor
Absolute maximum ratings(Ta=25°C)
| Parameter | Symbol | Rating | Unit |
| Total Power Dissipation | Pd | 150 | mW |
| Reverse Voltage | VR | 32 | V |
| Operating Temperature | Topr | -40~+85 | °C |
| Storage Temperature | Tstg | -40~+85 | °C |
| Soldering Temperature*1 | Tsol | 260±5 | °C |
Notes: *1. Soldering time≤5 seconds.
Electrical and optical characteristics(Ta=25°C)
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Wavelength of max. sensitivity | λMAX | - | - | 850 | - | nm |
Spectral range of sensitivity | l | S = 10 % of Smax | 700 | - | 1200 | nm |
Short-Circuit Current | ISC | Ee=5mW/cm2 λP=850nm | - | 45 | - | mA |
Reverse Light Current | IL | Ee=5mW/cm2 λP=850nm VR=10V | - | 45 | - | mA |
Rise time of the photocurrent | TR | RL=1KΩ VR=10V | - | 6 | - | uS |
Fall time of the photocurrent | TF | - | 6 | - | ||
Dark current VR=10V | ID | E=0mW/cm2 | - | - | 10 | nA |
Open-circuit voltage | VO | E=5mW/cm2 λ=850nm | - | 0.42 | - | V |
Capacitance VR = 0 V | C0 | f = 1 MHz, E = 0 | - | 5 | - | pF |
Reverse Breakdown Voltage | BVR | E=0mW/cm2 IR=100mA | 32 | _ | _ | V |
Receive angle | 2θ1/2 | - | - | 70 | - | deg |
Package Dimension:
