Ultra low gate charge Low reverse transfer Capacitance Fast switching capability High ruggedness Vertical MOSFET VDSSVGS=0V, ID=250 uA600 VRDS(on)VGS=10V, ID=1.5A 4.5ΩVGS(th)VDS= VGS, ID=250μA 2 4 V y21SVDS= 15V, ID=1.5A1.4 SIDSSVDS= 600V ,VGS=0V 1μAIGSSVGS=±30V ±100nAtd(off)ID = 2.0A, VDD = 300V VGS = 10V, RG = 18 30 nSCiSSVGS = 0V VDS = 25Vf = 1.0MHz 330 pFVSDIS=2.0A, VGS=0V 1.5V