High Accuracy
Small dark current
High linearity
Power Meter
3G InGaAs Photo diodeSpecifications
Small dark current
High linearity
High Accuracy
Power Meter
Parameter | Symbol | Condition | Ratings | Unit |
Storage temperature | Tstg | — | -40~+100 | °C |
Operating temperature | Top | — | -40~+85 | °C |
Reverse voltage | VR | CW | 30 | V |
Soldering time | — | — | 10 | s |
Soldering Temp | — | — | 260 | °C |
Optical & electrical characteristics
Parameter | Symbol | Min. | Typ. | Max. | Unit | Remark | Test Condition |
Wavelength Range | λ | 850 | — | 1700 | nm |
| — |
Power Range | P | -70 | — | 6 | dBm | * | Vr=5V,Rl =50Ω |
-60 | — | 16 | dBm | ** | |||
-50 | — | 26 | dBm | *** | |||
-40 | — | 36 | dBm | **** | |||
Dark Current | Id | — | 0.1 | 1 | nA | Φ300um | Vr=5V |
— | — | 3 | nA | Φ500um | Vr=5V | ||
— | — | 5 | nA | Φ1000um | Vr=0V | ||
— | 0.5 | — | nA | Φ2000um | Vr=0V | ||
Responsivity | R | — | 0.85 | — | A/W | * | Vr=5V, λ=1310 nm |
— | 0.083 | — | A/W | ** | |||
— | 0.013 | — | A/W | *** | |||
— | 0.0013 | — | A/W | **** | |||
Accuracy |
| — | — | ±0.25 | dB |
| @25°C |
Capacitance | Ct | — | — | 5 | pF | Φ300um | Vr=5V, f=1MHz |
— | — | 13 | pF | Φ500um | |||
— | — | 25 | pF | Φ1000um | |||
Response Time | Tr | — | — | 1 | ns | Φ300um | Vr=5V, 10~90% |
— | — | 5 | ns | Φ500um | |||
— | — | 20 | ns | Φ1000um |
