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InGaAs PIN Photo diode
InGaAs PIN Photo diode

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1.High responsivity
2.High speed
3.Low dark current
4.3 pin received warelength is 1100nm -1700nm
5.To-5 for flat-window

InGaAs PIN PD/pin diode /photo diode/coaxial detector
1)3 pin received warelength is 1100nm -1700nm
2)a high responsivity

 InGaAs PIN PD/pin diode /photo diode/coaxial detector

Features:
High responsivity

High speed

Low dark current

Low capacitance

Planar incident structure
To-5 for flat-window

 

Absolute Maximum Rating

 

Parameter

 Symbol

 Value

 Units

Storage temperature

Tstg

-40~+125

 

Operating temperature

Top

-40~+85

 

Forward current

If

5

mA

Reverse current

Ir

1000

µA

Reverse voltage

Vr

30

V

 

 

Electrical and optical characteristics (T=25oC)

Parameter

Symbol

Test Condition

Active area (μm)

Φ1000

Unit
Responsivity

Re

λ=1300 nm

0.80

A/W

Response spectrum

λ

-

850~1700

nm

Dark current

Id

Vr=0 V

≤1

nA

Capacitance

C

Vr=0 V

50

pF

Rise /Fall time

tr / tf

Vr=0 V

40

ns

surface uniformity

 

λ=1300 nm

<5%

 

Saturation power

Ps

Vr

≥10

mW

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